In situ threshold photoemission yields correlated to surface reconstructions of InAs „001..

Threshold photoemission yields for As and In terminated reconstructions of InAs ~001! are measured in situ and the variation of the photoyield is correlated with the surface stoichiometry. A significant excess in the measured photoelectron yield is found for the In terminated surfaces. These results are compared to a semiempirical model based on density-functional theory calculations of the surface local densities of states for the As terminated b2-~234! and newly predicted z-~432! reconstructions. The calculations are in good agreement with the measured trends, and provide a basis for the interpretation of threshold photoemission sensor signatures. © 2001 American Institute of Physics. @DOI: 10.1063/1.1406552#